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PIN Photodiodes PNA3602L PIN Photodiode Unit : mm For optical control systems 4.50.3 1.2 Not soldered 2.90.25 o2.4 3.90.3 2.4 1.5 Features High quantum efficiency High-speed response Small size, thin side-view type package 12.8 min. 0.9 1.70.2 0.8 2.8 2-1.20.3 2-0.450.15 1 2.54 2 0.450.15 R1.2 R0.6 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 100 -25 to +85 -30 to +100 Unit V mW C C 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Acceptance half angle *1 *2 Symbol ID IL P tr, tf*2 Ct VR = 10V Conditions VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 50 VR = 10V, f = 1MHz Measured from the optical axis to the half power point min 16 typ 0.1 850 2 6 45 max 10 Unit nA A nm ns pF deg. Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) P = 800nm 50 ,,, , ,,, , 1 PNA3602L PIN Photodiodes IL -- L 10 2 10 3 10 VR = 10V ID -- Ta 20 IL -- Ta 16 IL (A) ID (nA) IL (A) Photo current 10 2 10 1 12 Photo current Dark current 1 10 -1 8 10 -1 10 -2 4 10 -2 1 10 10 2 10 3 10 4 10 -3 - 40 - 20 0 20 40 60 80 100 0 - 40 - 20 0 20 40 60 80 100 Illuminance L (lx) Ambient temperature Ta (C ) Ambient temperature Ta (C ) Spectral sensitivity characteristics 100 VR = 10V Ta = 25C 10 3 VR = 10V Ta = 25C tr , tf -- RL Directivity characteristics 0 100 90 10 20 S (%) 80 10 2 80 70 60 Relative sensitivity S (%) tr , tf (ns) 30 Relative sensitivity Rise time, Fall time 60 40 50 60 70 80 90 10 50 40 30 40 1 20 20 0 200 400 600 800 1000 1200 10 -1 10 -2 10 -1 1 10 Wavelength (nm) External load resistance RL (k) 2 |
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